Semiconductor - Quiz
A) They permanently bond to the lattice. B) They become stationary. C) They do not stay indefinitely. D) They convert into photons.
A) Saturated. B) Extremely dense. C) Very dilute. D) Highly metallic.
A) Rigid solid crystal. B) Classical ideal gas. C) Quantum liquid. D) Bose-Einstein condensate.
A) Coulomb's law. B) Pauli exclusion principle. C) Conservation of energy. D) Heisenberg uncertainty principle.
A) Exponential. B) Logarithmic. C) Linear. D) Parabolic.
A) They are unaffected by external forces. B) They become instantly stationary. C) Much as they would in a vacuum. D) They move in reverse directions.
A) Atomic mass. B) Effective mass. C) Rest mass. D) Relativistic mass.
A) Standard model. B) Ising model. C) Drude model. D) Bohr model.
A) It is inert. B) It is unstable. C) It is highly conductive. D) It acts like a metal.
A) A neutron. B) A hole. C) A positron. D) A photon.
A) Variable. B) Negative. C) Neutral. D) Positive.
A) Negative. B) Zero. C) Positive. D) Infinite.
A) In simple classical terms. B) As stationary defects. C) As a metallic fluid. D) Only through complex quantum field theory.
A) Light-emitting diodes B) Vacuum tubes C) Capacitors D) Resistors
A) Lowering magnetic interference B) Reducing light intensity C) Increasing electrical resistance D) Heat dissipation
A) Hydraulic systems B) Wind turbines C) Electric vehicles D) Pneumatic pumps
A) Thermoelectric coolers B) Solar heaters C) Voltage stabilizers D) Battery chargers
A) Germanium and tin B) Silicon and germanium C) Carbon and tin D) Lead and silicon
A) 6 B) 4 C) 8 D) 2
A) Pure silicon B) Gallium arsenide C) Liquid arsenic D) Organic framework
A) Lack of temperature variation B) Intermediate conductivity C) Rigid crystalline structure D) Absolute zero resistance
A) Bulk ingots B) Thin film structures C) Crystalline wires D) Liquid canisters
A) Radio broadcasting B) Electric motors C) Thermal insulation D) Integrated circuits
A) Color transparency B) Magnetic permeability C) Chemical purity D) Weight reduction
A) Excessive vacuum B) High humidity C) Low ambient temperature D) Crystalline faults
A) 10 to 50 mm B) 5 to 20 mm C) 500 to 1000 mm D) 100 to 300 mm
A) Thermal oxidation B) Plasma spraying C) Czochralski method D) Photolithography
A) Doping the wafer B) Etching the circuit C) Removing impurities D) Forming silicon dioxide
A) Gamma radiation B) Infrared light C) Visible red laser D) Ultraviolet light
A) Laser ablation B) Plasma etching C) Mechanical sanding D) Acid dipping
A) Nitrogen B) Argon C) Chlorofluorocarbon D) Hydrogen
A) On the anode B) In the gas inlet C) On the chamber wall D) On the cathode
A) Diffusion B) Czochralski growth C) Photolithography D) Oxidation
A) Etching B) Refining C) Bonding D) Doping
A) Silicon dioxide layer B) Thin film C) P–n junction D) Magnetic field
A) 2,000 degrees Celsius B) 500 degrees Celsius C) 1,100 degrees Celsius D) Room temperature
A) Germanium B) Gallium arsenide C) Organic compounds D) Silicon carbide
A) They are composed of plastic. B) They have too many free electrons. C) They lack any electrons. D) Valence bands are filled, preventing electron flow.
A) An excess of electrons B) An excess of protons C) A neutral charge D) A shortage of electrons
A) A high resistance state B) A shortage of electrons C) An excess of electrons D) A shortage of holes
A) Homojunctions B) Ambipolar diffusion C) Thermal equilibrium D) Total annihilation
A) Holes B) Ions C) Protons D) Electrons
A) Photons B) Holes C) Ions D) Electrons
A) Recombination B) Thermal expansion C) Generation D) Excitation
A) A wide band of free electrons B) A pure valence band C) A narrow strip of immobile ions D) A conductive liquid
A) The strip of immobile ions B) The excess of photons C) The lack of holes D) The absence of thermal energy
A) Temperature difference B) Balanced currents C) Fixed ions D) Electrical conductivity
A) Photons B) Valence bands C) Neutrons D) Immobile ions
A) Ambipolar diffusion B) Doping C) Generation D) Recombination
A) Gallium arsenide B) Silicon with phosphorus C) XLPE with carbon black D) Pure copper
A) p-type B) n-type C) metallic D) intrinsic
A) conductive B) insulating C) p-type D) n-type
A) Laser diode B) Cat's-whisker detector C) Integrated circuit D) Transistor
A) 1904 B) 1920 C) 1947 D) 1958
A) A type of transistor B) An integrated circuit C) A high-voltage cable component D) A primitive semiconductor diode
A) A hot-point probe B) A laser beam C) A magnet D) An electron microscope
A) Fermi level B) Ground state C) Conduction band D) Valence band
A) Within band gaps B) Within the conduction band C) Within the valence band D) Above the conduction band
A) Quantum insulators B) Semi-insulators C) Sub-metals D) Hyper-conductors
A) Mechanical structural supports B) Battery electrolytes C) High-heat soldering D) Substrates for HEMT
A) Thermal energy or radiation B) Proton emissions C) Electrical resistance D) Magnetic fields
A) The purity of the surrounding air B) The mass of the dopant atoms C) Quantum statistical mechanics D) The size of the semiconductor sample
A) Inversely proportional to T B) Linear proportion to T C) Independent of T D) exp(−EG/kT)
A) Intrinsic B) Amorphous C) Metallic D) Extrinsic
A) Group III elements B) Transition metals C) Group V elements D) Noble gases
A) Donors B) Acceptors C) Insulators D) Traps
A) Selenium B) Boron C) Phosphorus D) Arsenic
A) Magnetic deflection B) Ion implantation C) Thermal melting D) Manual adjustment
A) Gold B) Copper C) Silver D) Selenium
A) Willoughby Smith B) Thomas Johann Seebeck C) Michael Faraday D) Karl Ferdinand Braun
A) Rectification B) Hall effect C) Seebeck effect D) Photovoltaic effect
A) Felix Bloch B) Edwin Herbert Hall C) Nevill Francis Mott D) J.J. Thomson
A) Josef Weiss B) Johan Koenigsberger C) Boris Davydov D) Walter H. Schottky
A) Felix Bloch B) Bernhard Gudden C) Alan Herries Wilson D) John Bardeen
A) An infrared detector B) A vacuum tube C) A radio transmitter D) A working solar cell |
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