A) They convert into photons. B) They do not stay indefinitely. C) They permanently bond to the lattice. D) They become stationary.
A) Very dilute. B) Saturated. C) Extremely dense. D) Highly metallic.
A) Bose-Einstein condensate. B) Classical ideal gas. C) Quantum liquid. D) Rigid solid crystal.
A) Pauli exclusion principle. B) Coulomb's law. C) Conservation of energy. D) Heisenberg uncertainty principle.
A) Parabolic. B) Logarithmic. C) Exponential. D) Linear.
A) Much as they would in a vacuum. B) They are unaffected by external forces. C) They become instantly stationary. D) They move in reverse directions.
A) Relativistic mass. B) Atomic mass. C) Effective mass. D) Rest mass.
A) Bohr model. B) Ising model. C) Standard model. D) Drude model.
A) It acts like a metal. B) It is highly conductive. C) It is unstable. D) It is inert.
A) A neutron. B) A photon. C) A hole. D) A positron.
A) Positive. B) Neutral. C) Negative. D) Variable.
A) Zero. B) Positive. C) Infinite. D) Negative.
A) As a metallic fluid. B) Only through complex quantum field theory. C) As stationary defects. D) In simple classical terms.
A) Capacitors B) Light-emitting diodes C) Vacuum tubes D) Resistors
A) Lowering magnetic interference B) Increasing electrical resistance C) Reducing light intensity D) Heat dissipation
A) Wind turbines B) Hydraulic systems C) Electric vehicles D) Pneumatic pumps
A) Battery chargers B) Thermoelectric coolers C) Voltage stabilizers D) Solar heaters
A) Carbon and tin B) Silicon and germanium C) Germanium and tin D) Lead and silicon
A) 8 B) 2 C) 4 D) 6
A) Organic framework B) Pure silicon C) Liquid arsenic D) Gallium arsenide
A) Rigid crystalline structure B) Absolute zero resistance C) Intermediate conductivity D) Lack of temperature variation
A) Bulk ingots B) Liquid canisters C) Crystalline wires D) Thin film structures
A) Integrated circuits B) Electric motors C) Thermal insulation D) Radio broadcasting
A) Color transparency B) Magnetic permeability C) Weight reduction D) Chemical purity
A) Crystalline faults B) Low ambient temperature C) Excessive vacuum D) High humidity
A) 100 to 300 mm B) 500 to 1000 mm C) 5 to 20 mm D) 10 to 50 mm
A) Photolithography B) Thermal oxidation C) Czochralski method D) Plasma spraying
A) Etching the circuit B) Forming silicon dioxide C) Doping the wafer D) Removing impurities
A) Visible red laser B) Gamma radiation C) Infrared light D) Ultraviolet light
A) Acid dipping B) Mechanical sanding C) Laser ablation D) Plasma etching
A) Argon B) Hydrogen C) Chlorofluorocarbon D) Nitrogen
A) On the cathode B) On the chamber wall C) On the anode D) In the gas inlet
A) Oxidation B) Diffusion C) Photolithography D) Czochralski growth
A) Bonding B) Etching C) Refining D) Doping
A) Silicon dioxide layer B) P–n junction C) Magnetic field D) Thin film
A) Room temperature B) 1,100 degrees Celsius C) 2,000 degrees Celsius D) 500 degrees Celsius
A) Gallium arsenide B) Germanium C) Silicon carbide D) Organic compounds
A) Valence bands are filled, preventing electron flow. B) They lack any electrons. C) They are composed of plastic. D) They have too many free electrons.
A) An excess of electrons B) A neutral charge C) An excess of protons D) A shortage of electrons
A) An excess of electrons B) A shortage of electrons C) A high resistance state D) A shortage of holes
A) Homojunctions B) Total annihilation C) Ambipolar diffusion D) Thermal equilibrium
A) Ions B) Holes C) Protons D) Electrons
A) Holes B) Electrons C) Ions D) Photons
A) Generation B) Excitation C) Thermal expansion D) Recombination
A) A conductive liquid B) A wide band of free electrons C) A narrow strip of immobile ions D) A pure valence band
A) The absence of thermal energy B) The strip of immobile ions C) The excess of photons D) The lack of holes
A) Fixed ions B) Temperature difference C) Electrical conductivity D) Balanced currents
A) Immobile ions B) Photons C) Valence bands D) Neutrons
A) Doping B) Recombination C) Ambipolar diffusion D) Generation
A) Pure copper B) Gallium arsenide C) Silicon with phosphorus D) XLPE with carbon black
A) metallic B) intrinsic C) n-type D) p-type
A) p-type B) n-type C) conductive D) insulating
A) Laser diode B) Cat's-whisker detector C) Integrated circuit D) Transistor
A) 1947 B) 1904 C) 1958 D) 1920
A) An integrated circuit B) A primitive semiconductor diode C) A type of transistor D) A high-voltage cable component
A) A hot-point probe B) A magnet C) An electron microscope D) A laser beam
A) Valence band B) Ground state C) Conduction band D) Fermi level
A) Within the conduction band B) Above the conduction band C) Within band gaps D) Within the valence band
A) Quantum insulators B) Sub-metals C) Hyper-conductors D) Semi-insulators
A) Mechanical structural supports B) Battery electrolytes C) High-heat soldering D) Substrates for HEMT
A) Thermal energy or radiation B) Electrical resistance C) Magnetic fields D) Proton emissions
A) The mass of the dopant atoms B) Quantum statistical mechanics C) The size of the semiconductor sample D) The purity of the surrounding air
A) Independent of T B) Linear proportion to T C) Inversely proportional to T D) exp(−EG/kT)
A) Amorphous B) Metallic C) Intrinsic D) Extrinsic
A) Transition metals B) Noble gases C) Group V elements D) Group III elements
A) Donors B) Insulators C) Acceptors D) Traps
A) Phosphorus B) Boron C) Arsenic D) Selenium
A) Magnetic deflection B) Thermal melting C) Manual adjustment D) Ion implantation
A) Silver B) Selenium C) Gold D) Copper
A) Karl Ferdinand Braun B) Michael Faraday C) Thomas Johann Seebeck D) Willoughby Smith
A) Hall effect B) Photovoltaic effect C) Rectification D) Seebeck effect
A) Nevill Francis Mott B) Felix Bloch C) J.J. Thomson D) Edwin Herbert Hall
A) Boris Davydov B) Walter H. Schottky C) Josef Weiss D) Johan Koenigsberger
A) John Bardeen B) Felix Bloch C) Bernhard Gudden D) Alan Herries Wilson
A) A radio transmitter B) A vacuum tube C) A working solar cell D) An infrared detector |